| Part Number | SI4420DY |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview | N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si4420DY in SOT96-1 (SO8). 2. Features s Low on-state resistance s Fast swit. s Low on-state resistance s Fast switching s TrenchMOS™ technology. 3. Applications s s s s s DC to DC convertors DC motor control Lithium-ion battery applications Notebook PC Portable equipment applications. c c 4. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1, simplified out. |
SI4420DY Datasheet
The SI4420DY is a N-channel FET.
| Part Number | SI4420DY |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview |
This N-channel HEXFET® power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this.
y * Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA www.irf.com Parameter Maximum Junction-to-Ambient * Max. 30 ±12.5 ±10 ±50 2.5 1.6 0.02 400 ± 20 -55 to + 150 Max. 50 Units V A W W/°C mJ V °C Units °C/W 1 1/3/2000 Si4420DY Electrical Characteristics @ TJ . |
| Part Number | SI4420DY |
|---|---|
| Description | Single N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior s.
12.5 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 V
RDS(ON) = 0.013 W @ VGS = 4.5 V
Low gate charge. Fast switching speed. High performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
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