VS6888BT Datasheet
VS6888BT Datasheet (Vanguard Semiconductor)
Vanguard Semiconductor
Features N-Channel，10V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=10V VitoMOS® Technology 100% Avalanche test Pb-free lead plating; RoHS compliant VS6888BT .
* N-Channel，10V Logic Level Control
* Enhancement mode
* Very low on-resistance RDS(on) @ VGS=10V
* VitoMOS® Technology
* 100% Avalanche test
* Pb-free lead plating; RoHS compliant
VS6888BT
65V/88A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10V ID
65 V 5.3 mΩ 88 A
TO-220AB
Part ID V.
VS6888BT Datasheet (VBsemi)
VBsemi
VS6888BT-VB VS6888BT-VB Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A Single FEATURES • 175 °C Junction Temperature • Trench P.
* 175 °C Junction Temperature
* Trench Power MOSFET
* Material categorization:
TO-220AB
D
G
GDS
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 17.