-60V Datasheet | Specifications & PDF Download

RF1K49154 Data Sheet October 1999 File Number 4143.3 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET™ Power MOSFET This Dual N-Channel power MOSFET is

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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www.DataSheet4U.com ZXMC6A09DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1A P-Channel V(B

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www.DataSheet.co.kr A Product Line of Diodes Incorporated ZXLD1356 60V 550mA LED DRIVER with AEC-Q100 Description The ZXLD1356 is a continuous mode

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www.DataSheet.co.kr A Product Line of Diodes Incorporated ZXLD1374 60V HIGH ACCURACY 1.5A BUCK/BOOST/BUCK-BOOST LED DRIVER CONVERTER Description Th

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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor PN2907A / MMBT2907A / PZT2907A 60 V PNP General-Purpose Transistor Features De

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FZ42-VB FZ42-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.024 at VGS = 10 V 0.028 at VGS = 4.

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ADVANCE INFORMATION ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -60V RDS(on) Max 125mΩ @ VGS = -10V 190mΩ @ VGS = -4

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LTC7003 Fast 60V Protected High Side NMOS Static Switch Driver FEATURES nn Wide Operating VIN: 3.5V to 60V nn 1Ω Pull-Down, 2.2Ω Pull-Up for Fast Tur

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www.DataSheet4U.com ZXMN6A08G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS 60 RDS(on) (⍀) 0.080 @ VGS = 10V 0.150 @ VGS = 4.5V ID (

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RTD2660V VIDEO-LF A/D BOARD SPECIFICATION www.datasheet4u.com General Descriptions The Realtek RTD2660 is a highly-integrated single chip IC control

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FGD4536 — 360 V PDP Trench IGBT FGD4536 360 V PDP Trench IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 5

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SBD10C60T/F_Datasheet 10A, 60V SCHOTTKY RECTIFIER DESCRIPTION SBD10C60T/F is schottky rectifier fabricated in silicon epitaxial planar technology, G

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ZXMN6A25N8 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS 60 RDS(on) (Ω) 0.050 @ VGS=10V 0.070 @ VGS=4.5V ID(A) 7.0 Description This

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www.DataSheet4U.com ZXMP6A13G 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V: RDS(on) = 0.390 : ID = -2.3A DESCRIPTION This new gene

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www.murata-ps.com Output (V) 3.3 5 12 DBQ/DVQ Series 420W Digital Fully Regulated Intermediate DC-DC Bus Converter Current (A) 60 60 35 Input (Vdc

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OC5266 OC5266 MOS， NMOS LED ， LED 。OC5266 5.5V 60V， ， MOS 1.5A ， NMOS 。 OC5266 ， ， PWM DIM。 DIM 0.3V ，。 OC5266 ， ， 。 OC5266 ， LED ，OC526

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BSC012N06NS MOSFET OptiMOSTM5 Power-Transistor, 60 V Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal re

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() CRSZ008N06N4Z SkyMOS4 N-MOSFET 60V, 0.55mΩ, 360A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Exce

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