0.027 Datasheet | Specifications & PDF Download

Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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® A Leading Supplier of Magnetic Components 10/100 BASE MODULES 10/100BASE-TX TRANSFORMER MODULES For Auto MDI/MDIX Applications Features： Part NO

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3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ =

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QN8027 High Performance Digital FM Transmitter for Portable Devices ________ General Description ________ ___________ Key Features __________ The QN

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTC1027 TRANSISTOR (NPN) FEATURES z Complementary to KTA102

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ZMJ SEMICONDUCTOR CO., LTD ● General Description The ZM027N03D combines advanced trench MOSFET technology with a low resistance package to provide ext

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BUP15CN027E-01 150V Radiation Tolerant power MOSFET BUP15CN027E-01 Features • Low RDS(on) • Single Event Effect (SEE) tolerant • Total Ionisation Dos

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AIMZA75R027M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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BSC027N10NS5 MOSFET OptiMOSTM Power-Transistor, 100 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Super

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Advanced CO.,LTD. Technology Electronics TO-126 Plastic-Encapsulate Transistors www.DataSheet4U.com ATE Advanced CO.,LTD. Technology Electronic

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ремонт Ðåìîíò êîìïüþòåðíûõ ìûøåé Ñåãîäíÿ ëþáîé êîìïüþòåð êîìïëåêòóåòñÿ ìàíèïóëÿòîðîì òèïà “ìûøü”. Ìûøü ìîæåò áûòü ïîäêëþ÷åíà ê ÏÊ ïîñðåäñòâîì ïîðòîâ

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TX70XXH series Features l Low power consumption l Low temperature coefficient l Built-in hysteresis characteristic Low Power Voltage Detector l High

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Features n Surface mount for economical assembly n High surge current rating n Low capacitance and insertion loss n Stable breakdown throughout life n

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WNM2027-VB WNM2027-VB Datasheet N-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 a

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Features n Surface mount for economical assembly n High surge current rating n Low capacitance and insertion loss n Stable breakdown throughout life n

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Features n Surface mount for economical assembly n High surge current rating n Low capacitance and insertion loss n Stable breakdown throughout life n

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Si High Voltage Capacitors 1000 V MACOM KV CAPS™ Features • High Working Voltage: 1000 V • Wide Range of Capacitance: 3.6 - 1300 pF • Excellent Stabil

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Features n Surface mount for economical assembly n High surge current rating n Low capacitance and insertion loss n Stable breakdown throughout life n

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