0.07A Datasheet | Specifications & PDF Download

AO4407A 30V P-Channel MOSFET General Description The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate cha

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ST13007 High voltage fast-switching NPN power transistor Features ■ DC current gain classification ■ High voltage capability ■ Low spread of dynamic

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IC INFORMATION Function Power AMP Type B.C.D MOS PAL007A J 1/1 E Model DEH-313/XM/JP sw_vcc TAB P-GND2 OUT2STBY OUT2+ VCC OUT1P-GND1 OUT1+ SVR

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VOLTAJES DE TRABAJO DEL AN17807 USADO EN EL CHASSIS GN3-M DE PANASONIC Y MODIFICACIÓN. Este circuito integrado funciona controlando el volumen de audi

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NPN BC107 – BC108 – BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors mounted i

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PN2907A / MMBT2907A / PZT2907A — 60 V PNP General-Purpose Transistor PN2907A / MMBT2907A / PZT2907A 60 V PNP General-Purpose Transistor Features De

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KSX13007A Series KSH13007A KSH13007AF NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 8A General Description • High voltage, high speed po

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2N2907A Small Signal Switching Transistor PNP Silicon Features • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS

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www.DataSheet4U.com No. STSE-CC5135A SPECIFICATIONS FOR NICHIA CHIP TYPE RED LED MODEL : NSSR007AT NICHIA CORPORATION -0- Nichia

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MMBT2907AWT1G, NSVMMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. The

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 Choice of Phototransistor (OPB706) or Photodarlington (OPB707) output  Unfocused for sensing diffuse surface  Low cost plastic housing  Designed

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P2N2907A Amplifier Transistor PNP Silicon Features • These are Pb--Free Devices* MAXIMUM RATINGS Rating Collector--Emitter Voltage Collector--Base V

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APL5607/A 600mA Linear Regulator for DC Fan Speed Control Features General Description • Low Dropout Voltage: 220mV (Typical) @ 600mA • Low Quiesc

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UTC PN2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP General Purpose Amplifier FEATURES This device is designed for use as a general purpose amplifier an

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MSR2N2907AUB / UBC Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 Radiation Level TID ELDRS QPL RANGE and RAD LE

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、 LED KP107XL  500V MOSFET   VDD  ±5%     ：  (OVP)  (OCP)  (LEB)  LED  (OTP)  SOP-7 DIP-7  LED KP107XL LED ，

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A

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