0.07A Datasheet | Specifications & PDF Download

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Alpha & Omega Semiconductors

4407A - AO4407A

AO4407A 30V P-Channel MOSFET General Description The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate cha.
Rating: 1 (13 votes)
ON Semiconductor

NCP1207A - PWM Controller

DATA SHEET www.onsemi.com PWM Current-Mode Controller for Free Running Quasi-Resonant Operation NCP1207A, NCP1207B The NCP1207A/B combines a true cur.
Rating: 1 (6 votes)
ANPEC

APL5607A - 600mA Linear Regulator

APL5607/A 600mA Linear Regulator for DC Fan Speed Control Features General Description • Low Dropout Voltage: 220mV (Typical) @ 600mA • Low Quiesc.
Rating: 1 (6 votes)
Infineon

FS200R07A1E3 - IGBT-Module

Technische Information / Technical Information IGBT-Module IGBT-modules FS200R07A1E3 HybridPACK™1 Modul mit Trench/Feldstopp IGBT3 und Emitter Cont.
Rating: 1 (5 votes)
Unisonic Technologies

U74LVC07A - HEX BUFFERS

UNISONIC TECHNOLOGIES CO., LTD U74LVC07A HEX BUFFERS WITH OPEN-DRAIN OUTPUTS  DESCRIPTION The U74LVC07A contain six independent buffers with open dr.
Rating: 1 (5 votes)
ON Semiconductor

NSVMMBT2907AWT1G - General Purpose Transistor

MMBT2907AWT1G, NSVMMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. The.
Rating: 1 (5 votes)
SMD

US07A - Surface Mount Ultra Fast Recover Rectifiers

US07A thru US07M 50 --- 1000 V 0.7A Surface Mount Ultra Fast Recover Rectifiers Reverse Voltage 50 to 1000 V Forward Current 0.7 A Features · Low.
Rating: 1 (5 votes)
Rectron

MMST2907A - PNP Transistor

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP) MMST2907A FEATURES * Power dissipation Pcm: 0.2 W (Tamb=2.
Rating: 1 (4 votes)
GME

MMBT2907A - PNP General Purpose Amplifier

Production specification PNP General Purpose Amplifier FEATURES  Epitaxial planar die construction.  Complementary NPN type available Pb Lead-fre.
Rating: 1 (4 votes)
RICHO

R5460N207AA - Li-ION/POLYMER 2-CELL PROTECTOR

R5460x2xx SERIES Li-ION/POLYMER 2-CELL PROTECTOR NO.EA-165-160603 OUTLINE The R5460x2xxxx Series are high voltage CMOS-based protection ICs for ove.
Rating: 1 (4 votes)
Integrated Device Technology

IDT74FCT3807A - 3.3V CMOS 1-TO-10 CLOCK DRIVER

IDT74FCT3807/A 3.3V CMOS 1-TO-10 CLOCK DRIVER COMMERCIAL/INDUSTRIAL TEMPERATURE RANGES 3.3V CMOS 1-TO-10 CLOCK DRIVER IDT74FCT3807/A FEATURES: • •.
Rating: 1 (4 votes)
Fairchild Semiconductor

KSP2907A - General Purpose Transistor

KSP2907A KSP2907A General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 .
Rating: 1 (4 votes)
Pioneer

PAL007A - Power AMP

IC INFORMATION Function Power AMP Type B.C.D MOS PAL007A J 1/1 E Model DEH-313/XM/JP sw_vcc TAB P-GND2 OUT2STBY OUT2+ VCC OUT1P-GND1 OUT1+ SVR.
Rating: 1 (4 votes)
Diodes Incorporated

MMBT2907A - 60V PNP Transistor

MMBT2907A 60V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features  Epitaxial Planar Die Construction  Ideal for Low Power Amplification and Switching  C.
Rating: 1 (4 votes)
Philips

PN2907A - PNP Transistor

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN2907A PNP switching transistor Product specification Supersedes data of September 1994 Fi.
Rating: 1 (4 votes)
ST Microelectronics

PN2907A - SMALL SIGNAL PNP TRANSISTOR

® PN2907A SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code PN2907A PN2907A-AP s Marking Package / Shipment PN2907A TO-92 / Bulk PN2907A.
Rating: 1 (4 votes)
Micro Commercial Components

PN2907A - PNP Amplifier

MCC Features • •      omponents 21201 Itasca Street Chatsworth  # $ % # PN2907A Through.
Rating: 1 (4 votes)
Micro Electronics

PN2907A - PNP TRANSISTORS

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Rating: 1 (4 votes)
Diotec

PN2907A - Transistors

PN2907A / 2N2907A PN2907A / 2N2907A PNP General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz V.
Rating: 1 (4 votes)
MaxPower

MXP1007AT - 100V N-ch Power MOSFET

100V N-ch Power MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=5.3mΩ@VGS=10V  Low Gate Charge Minimize Switching Loss  F.
Rating: 1 (4 votes)
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