.
4407A - AO4407A
AO4407A 30V P-Channel MOSFET General Description The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate cha.NCP1207A - PWM Controller
DATA SHEET www.onsemi.com PWM Current-Mode Controller for Free Running Quasi-Resonant Operation NCP1207A, NCP1207B The NCP1207A/B combines a true cur.APL5607A - 600mA Linear Regulator
APL5607/A 600mA Linear Regulator for DC Fan Speed Control Features General Description • Low Dropout Voltage: 220mV (Typical) @ 600mA • Low Quiesc.FS200R07A1E3 - IGBT-Module
Technische Information / Technical Information IGBT-Module IGBT-modules FS200R07A1E3 HybridPACK™1 Modul mit Trench/Feldstopp IGBT3 und Emitter Cont.U74LVC07A - HEX BUFFERS
UNISONIC TECHNOLOGIES CO., LTD U74LVC07A HEX BUFFERS WITH OPEN-DRAIN OUTPUTS DESCRIPTION The U74LVC07A contain six independent buffers with open dr.NSVMMBT2907AWT1G - General Purpose Transistor
MMBT2907AWT1G, NSVMMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. The.US07A - Surface Mount Ultra Fast Recover Rectifiers
US07A thru US07M 50 --- 1000 V 0.7A Surface Mount Ultra Fast Recover Rectifiers Reverse Voltage 50 to 1000 V Forward Current 0.7 A Features · Low.MMST2907A - PNP Transistor
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP) MMST2907A FEATURES * Power dissipation Pcm: 0.2 W (Tamb=2.MMBT2907A - PNP General Purpose Amplifier
Production specification PNP General Purpose Amplifier FEATURES Epitaxial planar die construction. Complementary NPN type available Pb Lead-fre.R5460N207AA - Li-ION/POLYMER 2-CELL PROTECTOR
R5460x2xx SERIES Li-ION/POLYMER 2-CELL PROTECTOR NO.EA-165-160603 OUTLINE The R5460x2xxxx Series are high voltage CMOS-based protection ICs for ove.IDT74FCT3807A - 3.3V CMOS 1-TO-10 CLOCK DRIVER
IDT74FCT3807/A 3.3V CMOS 1-TO-10 CLOCK DRIVER COMMERCIAL/INDUSTRIAL TEMPERATURE RANGES 3.3V CMOS 1-TO-10 CLOCK DRIVER IDT74FCT3807/A FEATURES: • •.KSP2907A - General Purpose Transistor
KSP2907A KSP2907A General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 .PAL007A - Power AMP
IC INFORMATION Function Power AMP Type B.C.D MOS PAL007A J 1/1 E Model DEH-313/XM/JP sw_vcc TAB P-GND2 OUT2STBY OUT2+ VCC OUT1P-GND1 OUT1+ SVR.MMBT2907A - 60V PNP Transistor
MMBT2907A 60V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching C.PN2907A - PNP Transistor
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN2907A PNP switching transistor Product specification Supersedes data of September 1994 Fi.PN2907A - SMALL SIGNAL PNP TRANSISTOR
® PN2907A SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code PN2907A PN2907A-AP s Marking Package / Shipment PN2907A TO-92 / Bulk PN2907A.PN2907A - PNP Amplifier
MCC Features • • omponents 21201 Itasca Street Chatsworth # $ % # PN2907A Through.PN2907A - Transistors
PN2907A / 2N2907A PN2907A / 2N2907A PNP General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz V.MXP1007AT - 100V N-ch Power MOSFET
100V N-ch Power MOSFET General Features Proprietary New Trench Technology RDS(ON),typ.=5.3mΩ@VGS=10V Low Gate Charge Minimize Switching Loss F.