0.140 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1404，IIRF1404 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mo

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P1403EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 14mΩ @VGS = -10V ID - 12A SOP- 08 ABSOLUTE MAXIMUM RATINGS (T

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http://www.ncepower.com Pb Free Product NCE82H140 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE82H140 uses advanced trench technol

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Product Specification AU OPTRONICS CORPORATION ( ) Preliminary Specifications ( V ) Final Specifications Module Model Name Note ( ) 14.0”(13.97”) HD

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BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features ■ Products are pre-selected in DC current gain Application ■ General purpos

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HY1403D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/42A, RDS(ON)= 10 mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex

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Ordering number:ENN1410B Monolithic Digital IC LB1403N Series 5-Dot Red/Green LED Level Meter Use • AC level meters such as VU meters. • DC level me

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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  AUTOMOTIVE GRADE Features  Advanced Planar Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rate

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PRODUCT SPECIFICATION Doc. Number: □ Tentative Specification □ Preliminary Specification ▓ Approval Specification MODEL NO.: N140BGE SUFFIX: E43 Cust

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VFD Module GU-7000 series GU140X32F-7000B 4 line simultaneous display capable wide screen VFD module. Same size and shape as LCD, for easy drop-in rep

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Global LCD Panel Exchange Center www.panelook.com SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BEG REPR

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MC14093B Quad 2-Input “NAND Schmitt Trigger The MC14093B Schmitt trigger is constructed with MOS P−channel and N−channel enhancement mode devices i

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SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

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www.DataSheet.co.kr GenX3TM 1400V IGBTs w/ Diode Avalanche Rated IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 VCES = 1400V IC110 = 28A VCE(sat) ≤ 3

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1N4139---1N4146 PLASTIC SILICON RECTIFIERS VOLTAGE RANGE: 50 --- 1200 V CURRENT: 3.0 A FEATURES Low cost Diffused junction Low leakage Low forward vo

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isc P-Channel MOSFET Transistor IRFP9140N，IIRFP9140N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.117Ω ·Enhancement mode: ·100% avalanche

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

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