P1403EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 14mΩ @VGS = -10V ID - 12A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 , 2 TA = 25 °C TA = 70 °C ID IDM -12 -10 -65 Avalanche Current IAS -39 Avalanche Energy L = 0.1mH EAS 89 Power Dissipation TA = 25 °C TA = 70 °C PD 3.