P1403CV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 14.6mΩ @VGS = 10V ID 11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±12 Continuous Drain Current1 Pulsed Drain Current2 TA = 25 °C TA = 70 °C ID IDM 11 7 45 Avalanche Current IAS 29 Avalanche Energy L = 0.1mH EAS 40 Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 1 Junction.