0.61 Datasheet | Specifications & PDF Download

2SK1618(L), 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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V-Data Synchronous DRAM VDS7616A4A 2M x 16 Bit x 4 Banks General Description The VDS7616A4A are four-bank Synchronous DRAMs organized as 2,097152 wo

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V-Data Revision History Revision 1 ( Dec. 2001 ) 1.Fister release. VDD7616A4A Revision 2 ( Apr. 2002 ) 1. Changed module current specification. 2. A

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V-Data Synchronous DRAM VDS7616A4A 2M x 16 Bit x 4 Banks General Description The VDS7616A4A are four-bank Synchronous DRAMs organized as 2,097152 wo

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V-Data Revision History Revision 1 ( Dec. 2001 ) 1.Fister release. VDD8616A8A Revision 2 ( Apr. 2002 ) 1. Changed module current specification. 2. A

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V-Data Synchronous DRAM VDS4616A4A 512K x 16 Bit x 2 Banks General Description The VDS4616A4A are two-bank Synchronous DRAMs organized as 524,288 wo

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V-Data Synchronous DRAM VDS7616A4A 2M x 16 Bit x 4 Banks General Description The VDS7616A4A are four-bank Synchronous DRAMs organized as 2,097152 wo

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V-Data Synchronous DRAM VDS7616A4A 2M x 16 Bit x 4 Banks General Description The VDS7616A4A are four-bank Synchronous DRAMs organized as 2,097152 wo

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V-Data Synchronous DRAM VDS6616A4A 1M x 16 Bit x 4 Banks General Description The VDS6616A4A are four-bank Synchronous DRAMs organized as 1,048,576 w

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TPP36106 36-V Input, 1-A Synchronous Step-Down Voltage Regulator Features Description • Wide Supply Voltage: 4.5 V to 36 V • Internal Power FET：180

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3PEAK TP1961/TP1962/TP1964 Features 7ns, 1/2/4, Ultra-High-Speed, +3V/+5V, Beyond-the-Rails Comparators Description ◼ Ultra-Fast, 7ns Propagation

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A-Data Synchronous DRAM ADS7616A4A 2M x 16 Bit x 4 Banks General Description The ADS7616A4A are four-bank Synchronous DRAMs organized as 2,097152 wo

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TPA1861/TPA1862/TPA1864 40-V, 6-MHz, Zero-Drift Op Amps Features • Supply Voltage: 4.5 V to 40 V or ±2.25 V to ±20 v • Offset Voltage: ±30 μV Maximum

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