ME6118
Microne
346.22kb
800ma adjustable voltage high speed ldo regulators. The ME6118 series are highly accurate, low noise, LDO Voltage Regulators that are capable of providing an output current that is in e
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ME6118 - 1A Adjustable Voltage High Speed LDO Regulators
(ChipSourceTek)
ME6118
1A Adjustable Voltage High Speed LDO Regulators ME6118 Series
General Description
Features
The ME6118 series are highly accurate, low noise.
ME6119 - 400mA Adjustable Voltage High Speed LDO Regulators
(Microne)
ME6119
400mA Adjustable Voltage High Speed LDO Regulators ME6119 Series
General Description
Features
The ME6119 series are highly accurate, low no.
ME6100 - 1.0A Adjustabe and Fixed Voltage LDO Linear Regulator
(Matsuki)
ME6100(Green)
1.0A Adjustabe and Fixed Voltage LDO Linear Regulator
GENERAL DESCRIPTION
FEATURES
The ME6100 is a low-dropout linear regulator that .
ME600815 - Three-Phase Diode Bridge Modules (150 Amperes/800 Volts)
(Powerex Powers)
ME600815
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Three-Phase Diode Bridge Modules
150 Amperes/800 Volts
.
ME601215 - Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts)
(Powerex Powers)
ME601215 ME601615
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Three-Phase Diode Bridge Modules
150 Amperes/12.
ME601615 - Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts)
(Powerex Powers)
ME601215 ME601615
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Three-Phase Diode Bridge Modules
150 Amperes/12.
ME60N03 - 30V N-Channel Enhancement Mode MOSFET
(Matsuki)
ME60N03
30V N-Channel Enhancement Mode MOSFET
VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5mΩ RDS(ON), Vgs@4.5V,Ids@20A =13mΩ
FEATURES
Advanced trench proce.
ME60N03-G - 30V N-Channel Enhancement Mode MOSFET
(Matsuki)
ME60N03/ME60N03-G
-g30V N-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
The ME60N03 is the N-Channel logic enhancement mode power field effect .
ME60N03A - 25V N-Channel Enhancement Mode MOSFET
(Matsuki)
25V N-Channel Enhancement Mode MOSFET
VDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m
ME60N03A
FEATURES
Advanced trench proce.
ME60N03AS - 25V N-Channel Enhancement Mode MOSFET
(Matsuki)
ME60N03AS
25V N-Channel Enhancement Mode MOSFET
VDS=25V RDS(ON), Vgs@10V,Ids@30A ≦ 9mΩ RDS(ON), Vgs@ 5V,Ids@15A ≦18mΩ
APPLICATIONS
● Motherboard (V-C.