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ME60N03AS - 25V N-Channel Enhancement Mode MOSFET

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Features

  • Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN.

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Datasheet Details

Part number ME60N03AS
Manufacturer Matsuki
File Size 1.10 MB
Description 25V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ME60N03AS Datasheet
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ME60N03AS 25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A ≦ 9mΩ RDS(ON), Vgs@ 5V,Ids@15A ≦18mΩ APPLICATIONS ● Motherboard (V-Core) ● DC/DC Converter ● Load Switch ● LCD Display inverter ● IPC FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(Tj=150℃)* Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ TC=25℃ Symbol VDSS VGSS ID IDM PD TJ, Tstg EAS RθJA RθJC Limit 25 ±20 53 100 40 25 -55 to 150 50 T≦10 sec Steady State 3.
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