ME60N04 Datasheet PDF - Matsuki N-Channel MOSFET Specs

ME60N04 - N-Channel MOSFET

Datasheet Summary

Description

The ME60N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON)≦12mΩ@VGS=10V.
RDS(ON)≦17mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

Datasheet Details

Part number	ME60N04
Manufacturer	Matsuki
File Size	690.52 KB
Description	N-Channel MOSFET
Datasheet	ME60N04 Datasheet
Additional preview pages of the ME60N04 datasheet.

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Full PDF Text Transcription

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N- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME60N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss. ME60N04 FEATURES ● RDS(ON)≦12mΩ@VGS=10V ● RDS(ON)≦17mΩ@VGS=4.

Published: Mar 27, 2015 |