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ME60N03A - 25V N-Channel Enhancement Mode MOSFET

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Features

  • Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN.

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Datasheet Details

Part number ME60N03A
Manufacturer Matsuki
File Size 669.03 KB
Description 25V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ME60N03A Datasheet
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25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m ME60N03A FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Unless Otherwise Noted) Symbol VDSS VGSS ID IDM Limit 25 ±20 50 100 50 23 -55 to 150 110 15 Steady State 20 40 Unit V V A A W TA=25 TA=70 PD TJ, Tstg ) EAS RθJA RθJC Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse(L=0.
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