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ME60N03A 25V N-Channel Enhancement Mode MOSFET

ME60N03A Description

25V N-Channel Enhancement Mode MOSFET VDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m ME60N03A .

ME60N03A Features

* Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25 Parameter Drain-Source Voltage G

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Datasheet Details

Part number
ME60N03A
Manufacturer
Matsuki
File Size
669.03 KB
Datasheet
ME60N03A_Matsuki.pdf
Description
25V N-Channel Enhancement Mode MOSFET

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