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ME60N03S-G - N-Channel MOSFET

This page provides the datasheet information for the ME60N03S-G, a member of the ME60N03S N-Channel MOSFET family.

Datasheet Summary

Features

  • Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for High-side switching of PWM.

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Datasheet preview – ME60N03S-G

Datasheet Details

Part number ME60N03S-G
Manufacturer Matsuki
File Size 1.37 MB
Description N-Channel MOSFET
Datasheet download datasheet ME60N03S-G Datasheet
Additional preview pages of the ME60N03S-G datasheet.

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Full PDF Text Transcription

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ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A ≦ 10mΩ RDS(ON), Vgs@4.5V,Ids@15A ≦18.5mΩ FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for High-side switching of PWM application.
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