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ME60N03 30V N-Channel Enhancement Mode MOSFET

ME60N03 Description

ME60N03 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5mΩ RDS(ON), Vgs@4.5V,Ids@20A =13mΩ .

ME60N03 Features

* Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Paramet

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Datasheet Details

Part number
ME60N03
Manufacturer
Matsuki
File Size
672.97 KB
Datasheet
ME60N03-Matsuki.pdf
Description
30V N-Channel Enhancement Mode MOSFET

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