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ME60N03-G 30V N-Channel Enhancement Mode MOSFET

ME60N03-G Description

ME60N03/ME60N03-G -g30V N-Channel Enhancement Mode MOSFET GENERAL .
The ME60N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

ME60N03-G Features

* RDS(ON)≦8.5mΩ@VGS=10V
* RDS(ON)≦13mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

ME60N03-G Applications

* Power Management
* DC/DC Converter
* LCD TV & Monitor Display inverter
* CCFL inverter
* Secondary Synchronous Rectification PIN CONFIGURATION (TO-252-3L) Top View
* The Ordering Information: ME60N03 (Pb-free) ME60N03-G (Green product-Halogen free) Absolute Maximum Rating

📥 Download Datasheet

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Datasheet Details

Part number
ME60N03-G
Manufacturer
Matsuki
File Size
944.65 KB
Datasheet
ME60N03-G-Matsuki.pdf
Description
30V N-Channel Enhancement Mode MOSFET

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30V N-Channel Enhancement Mode MOSFET Matsuki
Matsuki ME60N03-G-like datasheet