Datasheet4U Logo Datasheet4U.com

ME60N03-G - 30V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The ME60N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦8.5mΩ@VGS=10V.
  • RDS(ON)≦13mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Datasheet preview – ME60N03-G

Datasheet Details

Part number ME60N03-G
Manufacturer Matsuki
File Size 944.65 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ME60N03-G Datasheet
Additional preview pages of the ME60N03-G datasheet.

📁 Similar Datasheet

  • ME600815 - Three-Phase Diode Bridge Modules (150 Amperes/800 Volts) (Powerex Powers)
  • ME601215 - Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME601615 - Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME6118 - 1A Adjustable Voltage High Speed LDO Regulators (ChipSourceTek)
  • ME6118 - 800mA Adjustable Voltage High Speed LDO Regulators (Microne)
  • ME6119 - 400mA Adjustable Voltage High Speed LDO Regulators (Microne)
  • ME6201 - low-dropout linear voltage regulators (Microne)
  • ME6203 - High Input Voltage LDO Linear Regulators (YUSHIN)
  • ME6203 - High Input Voltage LDO Regulators (Microne)
  • ME6206 - positive voltage regulators (Microne)
Other Datasheets by Matsuki

Full PDF Text Transcription

Click to expand full text
ME60N03/ME60N03-G -g30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME60N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss. FEATURES ● RDS(ON)≦8.5mΩ@VGS=10V ● RDS(ON)≦13mΩ@VGS=4.
Published: |