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ME60N03-G Datasheet - Matsuki

ME60N03-G - 30V N-Channel Enhancement Mode MOSFET

The ME60N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME60N03-G Features

* RDS(ON)≦8.5mΩ@VGS=10V

* RDS(ON)≦13mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management

* DC/DC Converter

* LCD TV & Monitor Display inverter

* CCFL invert

ME60N03-G-Matsuki.pdf

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Datasheet Details

Part number:

ME60N03-G

Manufacturer:

Matsuki

File Size:

944.65 KB

Description:

30v n-channel enhancement mode mosfet.

📁 Related Datasheet

ME60N03 ME60N03A ME60N03AS ME60N03S ME60N03S-G ME60N04

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ME60N03-G 30V N-Channel Enhancement Mode MOSFET Matsuki