037N08N Datasheet | Specifications & PDF Download

OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gat

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BSC037N08NS5 MOSFET OptiMOSTM 5 Power-Transistor, 80 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Supe

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OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate c

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OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gat

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isc N-Channel MOSFET Transistor IPA037N08N3,IIPA037N08N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.7mΩ (max) ·Enhancement mode ·Fast Swit

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI037N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.75mΩ ·Enhancement mode ·

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Public BSC037N08NS5 Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 80 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 175°C

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OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate c

(9 views)

OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate c

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP037N08N3，IIPP037N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.75mΩ ·Enhan

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OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gat

(7 views)

OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate c

(6 views)