Datasheet Details
- Part number
- IPI037N08N3
- Manufacturer
- INCHANGE
- File Size
- 256.67 KB
- Datasheet
- IPI037N08N3-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPI037N08N3 Description
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI037N08N3 *.
IPI037N08N3 Features
* Static drain-source on-resistance:
RDS(on) ≤3.75mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
IPI037N08N3 Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
100
A
IDM
Drain Current-Single Pulsed
400
A
PD
Total Dissipation @TC=25℃
214
W
Tj
Max. Operating Junction Temperature
📁 Related Datasheet
📌 All Tags