IPI070N08N3G - N-Channel MOSFET
IPI070N08N3G Features
* Static drain-source on-resistance: RDS(on) ≤6.7mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Ideal for high frequency switching and sync. Rec.
* Optim
