IPI04CN10N - N-Channel MOSFET

Datasheet Summary

Features

Static drain-source on-resistance: RDS(on) ≤3.9mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IPI04CN10N
Manufacturer	INCHANGE
File Size	256.67 KB
Description	N-Channel MOSFET
Datasheet	IPI04CN10N Datasheet
Additional preview pages of the IPI04CN10N datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor NCHANGE Semicon Iductor IPI04CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 100 A IDM Drain Current-Single Pulsed 400 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.

Published: Oct 28, 2020 |