IPI04CN10N N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor NCHANGE Semicon Iductor IPI04CN10N *.

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Datasheet Specifications

Part number: IPI04CN10N
Manufacturer: INCHANGE
File Size: 256.67 KB
Datasheet: IPI04CN10N-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤3.9mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 100 A IDM Drain Current-Single Pulsed 400 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature

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N-Channel MOSFET INCHANGE

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