IPI04CN10N - N-Channel MOSFET
IPI04CN10N Features
* Static drain-source on-resistance: RDS(on) ≤3.9mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* reliable device for use in a wide variety of applications
