IPI05CN10N N-Channel MOSFET

INCHANGE

IPI05CN10N Description

isc N-Channel MOSFET Transistor *.

IPI05CN10N Features

* Static drain-source on-resistance: RDS(on) ≤5.1mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IPI05CN10N Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature 175 Tstg Storage

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IPI05CN10N Datasheet Preview — Preview of IPI05CN10N PDF

Datasheet Details

Part number: IPI05CN10N
Manufacturer: INCHANGE
File Size: 266.00 KB
Datasheet: IPI05CN10N-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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