Part number:
IPI057N08N3
Manufacturer:
File Size:
1.00 MB
Description:
Power-transistor.
IPI057N08N3 Datasheet (1.00 MB)
* Q' 3 81>>5? B=1
IPI057N08N3 Datasheet (1.00 MB)
IPI057N08N3
1.00 MB
Power-transistor.
📁 Related Datasheet
IPI057N08N3G - Power-Transistor
(Infineon)
IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G
%&$ #™3 Power-Transistor
Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D .
IPI051N15N5 - MOSFET
(Infineon)
IPI051N15N5
MOSFET
OptiMOSª5 Power-Transistor, 150 V
Features
Package • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on.
IPI051N15N5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche .
IPI051NE8NG - Power-Transistor
(Infineon Technologies)
..
IPB051NE8N G
IPI05CNE8N G IPP054NE8N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x .
IPI052NE7N3 - Power-Transistor
(Infineon)
%&$ #B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q( @D9=9J54 D53 8>? 3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 .
IPI052NE7N3G - Power-Transistor
(Infineon Technologies)
%&$ #B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q( @D9=9J54 D53 8>? 3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 .
IPI05CN10N - Power-Transistor
(Infineon)
IPB05CN10N G IPI05CN10N G IPP05CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM).
IPI05CN10N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche .
