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IPI05CNE8N Power-Transistor

IPI05CNE8N Description

IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS™2 Power-Transistor .

IPI05CNE8N Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 85 V 5.1 mΩ 100 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qua

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Power-Transistor Infineon
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