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IPI05CN10N Power-Transistor

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Description

IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS®2 Power-Transistor .

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Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 100 V 5.1 mΩ 100 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qu

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