Part number:
IPI05CN10N
Manufacturer:
File Size:
510.71 KB
Description:
Power-transistor.
IPI05CN10N Datasheet (510.71 KB)
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO 263) ID 100 V 5.1 mΩ 100 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qu
IPI05CN10N Datasheet (510.71 KB)
IPI05CN10N
510.71 KB
Power-transistor.
📁 Related Datasheet
IPI05CN10N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche .
IPI05CN10NG - Power-Transistor
(Infineon)
IPB05CN10N G IPI05CN10N G IPP05CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM).
IPI05CNE8N - Power-Transistor
(Infineon)
IPB051NE8N G IPI05CNE8N G IPP054NE8N G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM).
IPI05CNE8NG - Power-Transistor
(Infineon)
IPB051NE8N G IPI05CNE8N G IPP054NE8N G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM).
IPI051N15N5 - MOSFET
(Infineon)
IPI051N15N5
MOSFET
OptiMOSª5 Power-Transistor, 150 V
Features
Package • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on.
IPI051N15N5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche .
IPI051NE8NG - Power-Transistor
(Infineon Technologies)
..
IPB051NE8N G
IPI05CNE8N G IPP054NE8N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x .
IPI052NE7N3 - Power-Transistor
(Infineon)
%&$ #B< # : A 0<& <,9=4=>: <
6LHZ[XLY Q( @D9=9J54 D53 8>? 3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 .
