040N06N Datasheet | Specifications & PDF Download

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPA040N06N Data Sheet Rev. 2.1 Final Power Managem

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Type IPB037N06N3 G ™ IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Features • for sync. rectification, drives and dc/dc SMPS • Excellent g

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Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP040N06N，IIPP040N06N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancem

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Public IPP040N06NF2S Final datasheet MOSFET StrongIRFET™2 Power‑Transistor, 60 V Features • Optimized for wide range of applications • N‑channel, no

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP040N06N3，IIPP040N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.7mΩ ·Enhance

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPA040N06N Data Sheet Rev. 2.1 Final Power Managem

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

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IPP040N06N3 G MOSFET OptiMOSª3 Power-Transistor, 60 V Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x RDS(on) pro

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Type OptiMOS™3 Power-Transistor Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS(on) product (FOM) • Very lo

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Type IPB037N06N3 G ™ IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Features • for sync. rectification, drives and dc/dc SMPS • Excellent g

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