MOSFET MetalOxideSemiconductorFieldEffectTran.
IPP040N06N - Power-Transistor
Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .IPP040N06N - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP040N06N,IIPP040N06N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancem.IPP040N06NF2S - MOSFET
IPP040N06NF2S MOSFET StrongIRFETTM2 Power-Transistor Features • Optimized for wide range of applications • N-channel, normal level • 100% avalanche t.IPI040N06N3G - Power-Transistor
Type IPB037N06N3 G ™ IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Features • for sync. rectification, drives and dc/dc SMPS • Excellent g.IPP040N06N3G - Power-Transistor
Type IPB037N06N3 G ™ IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Features • for sync. rectification, drives and dc/dc SMPS • Excellent g.040N06N - MOSFET
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPA040N06N Data Sheet Rev. 2.1 Final Power Managem.IPA040N06N - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.IPP040N06N3 - N-Channel MOSFET
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP040N06N3,IIPP040N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.7mΩ ·Enhance.IPP040N06N3 - Power Transistor
IPP040N06N3 G MOSFET OptiMOSª3 Power-Transistor, 60 V Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x RDS(on) pro.IPI040N06N3 - Power Transistor
Type OptiMOS™3 Power-Transistor Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS(on) product (FOM) • Very lo.IPA040N06N - MOSFET
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPA040N06N Data Sheet Rev. 2.1 Final Power Managem.