IPP040N06NF2S
0.97MB
Mosfet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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📁 Related Datasheet
IPP040N06N - Power-Transistor
(Infineon Technologies)
Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .
IPP040N06N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP040N06N,IIPP040N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.0mΩ ·Enhancem.
IPP040N06N3 - N-Channel MOSFET
(INCHANGE)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IPP040N06N3,IIPP040N06N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3.7mΩ ·Enhance.
IPP040N06N3 - Power Transistor
(Infineon)
IPP040N06N3 G
MOSFET
OptiMOSª3 Power-Transistor, 60 V
Features
• for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x RDS(on) pro.
IPP040N06N3G - Power-Transistor
(Infineon Technologies AG)
Type
IPB037N06N3 G
™
IPI040N06N3 G IPP040N06N3 G
OptiMOS 3 Power-Transistor
Features • for sync. rectification, drives and dc/dc SMPS • Excellent g.
IPP041N04N - Power Transistor
(Infineon)
Type
#$% &™3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1.
IPP041N04N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPP041N04N,IIPP041N04N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching.
IPP041N04NG - Power-Transistor
(Infineon Technologies)
Type
#$% &™3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1.
IPP041N12N3 - Power Transistor
(Infineon)
IPP041N12N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
IPP041N12N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPP041N12N3,IIPP041N12N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switchi.