IPP041N04N Datasheet, Transistor, Infineon

IPP041N04N Features

• Transistor
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, normal

PDF File Details

Part number:

IPP041N04N

Manufacturer:

Infineon ↗

File Size:

688.95kb

Download:

📄 Datasheet

Description:

Power transistor.

IPP041N04N Application

• Applications
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)

TAGS

IPP041N04N

Infineon

📁 Related Datasheet

IPP041N04N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP041N04N,IIPP041N04N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching.

IPP041N04NG - Power-Transistor (Infineon Technologies)
Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1.

IPP041N12N3 - Power Transistor (Infineon)
IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.

IPP041N12N3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP041N12N3，IIPP041N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switchi.

IPP041N12N3G - Power-Transistor (Infineon Technologies AG)
IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.

IPP040N06N - Power-Transistor (Infineon Technologies)
Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .

IPP040N06N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP040N06N，IIPP040N06N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancem.

IPP040N06N3 - N-Channel MOSFET (INCHANGE)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP040N06N3，IIPP040N06N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.7mΩ ·Enhance.

IPP040N06N3 - Power Transistor (Infineon)
IPP040N06N3 G MOSFET OptiMOSª3 Power-Transistor, 60 V Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x RDS(on) pro.

IPP040N06N3G - Power-Transistor (Infineon Technologies AG)
Type IPB037N06N3 G ™ IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Features • for sync. rectification, drives and dc/dc SMPS • Excellent g.