IPP041N12N3

Power Transistor

Infineon

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant, halogen free

* Qualified

IPP041N12N3

873.00 KB

Power transistor.

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IPP041N12N3 Power Transistor Infineon

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