IPP048N06L
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Power-transistor.
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IPP048N06LG - Power-Transistor
(Infineon Technologies)
..
IPP048N06L G
IPB048N06L G
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channe.
IPP048N04N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP048N04N，IIPP048N04N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.8mΩ ·Enhancem.
IPP048N12N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPP048N12N3，IIPP048N12N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.8mΩ ·Enhancement mode ·Fast Switchi.
IPP048N12N3 - Power-Transistor
(Infineon)
$ $
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7MI[\YMZ R( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 I' ;I \[# AC@ 5F4E ) ' R/ 6CJ =@.
IPP048N12N3G - Power-Transistor
(Infineon)
$ $
%&$ #' $ ;B 1 ='=-: >5>?;=
7MI[\YMZ R( 492 ??6= ?@ C>2 ==6G6= R I46==6?E82 E6 492 C86 I' ;I \[# AC@ 5F4E ) ' R/ 6CJ =@.
IPP040N06N - Power-Transistor
(Infineon Technologies)
Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .
IPP040N06N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP040N06N，IIPP040N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤4.0mΩ ·Enhancem.
IPP040N06N3 - N-Channel MOSFET
(INCHANGE)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IPP040N06N3，IIPP040N06N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3.7mΩ ·Enhance.
IPP040N06N3 - Power Transistor
(Infineon)
IPP040N06N3 G
MOSFET
OptiMOSª3 Power-Transistor, 60 V
Features
• for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x RDS(on) pro.
IPP040N06N3G - Power-Transistor
(Infineon Technologies AG)
Type
IPB037N06N3 G
™
IPI040N06N3 G IPP040N06N3 G
OptiMOS 3 Power-Transistor
Features • for sync. rectification, drives and dc/dc SMPS • Excellent g.
