Datasheet Details
- Part number
- IPP048N12N3
- Manufacturer
- INCHANGE
- File Size
- 241.63 KB
- Datasheet
- IPP048N12N3-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPP048N12N3 Description
isc N-Channel MOSFET Transistor IPP048N12N3，IIPP048N12N3 *.
IPP048N12N3 Features
* Static drain-source on-resistance:
RDS(on) ≤4.8mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
* Ideal for high-frequency switching and synchronous rectific
IPP048N12N3 Applications
* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field
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