IPP041N12N3 Datasheet - INCHANGE

IPP041N12N3, N-Channel MOSFET

isc N-Channel MOSFET Transistor IPP041N12N3，IIPP041N12N3 *

Features

* Static drain-source on-resistance: RDS(on) ≤4.1mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Ideal for high-frequency switching and synchronous rectifica

Applications

* of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

IPP041N12N3-INCHANGE.pdf