Datasheet Details
- Part number
- IPP04CN10N
- Manufacturer
- INCHANGE
- File Size
- 241.80 KB
- Datasheet
- IPP04CN10N-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPP04CN10N Description
isc N-Channel MOSFET Transistor NCHANGE Semicon Iductor IPP04CN10N,IIPP04CN10N *.IPP04CN10N Features
* Static drain-source on-resistance: RDS(on) ≤3.9mΩIPP04CN10N Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature 175 Tstg Storage📁 Related Datasheet
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