IPP041N12N3G Datasheet - Infineon Technologies AG

IPP041N12N3G Power-Transistor

IPP041N12N3G Features

* N-channel, normal level

* Excellent gate charge x R DS(on) product (FOM)

* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID

* 175 °C operating temperature

* Pb-free lead plating; RoHS compliant, halogen free

* Qualified

Datasheet Details

IPP041N12N3G

Infineon ↗ Technologies AG

873.00 KB

Power-transistor.

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