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IPP045N10N3G MOSFET

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Description

IPP045N10N3 G MOSFET OptiMOSª3 Power-Transistor, 100 V .

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Features

* N-channel, normal level
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant

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IPP045N10N3G MOSFET Infineon Technologies
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