053N08N Datasheet | Specifications & PDF Download

053N08N-VB 053N08N-VB Datasheet N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 80 RDS(on) () Max. 0.0050 at VGS = 10 V 0.0070 at VGS = 6.0 V

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ISZ053N08NM6 MOSFET OptiMOSTM 6 Power-Transistor, 80 V Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x

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isc N-Channel MOSFET Transistor IPD053N08N3,IIPD053N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanc

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() Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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IPD053N08N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance

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IPD053N08N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance

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