IPD053N08N3, IPD053N08N3G Power-Transistor

Infineon

Description

IPD053N08N3 G OptiMOS®3 Power-Transistor .

📥 Download Datasheet

IPD053N08N3 Datasheet Preview — This datasheet PDF includes multiple part numbers: IPD053N08N3, IPD053N08N3G. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IPD053N08N3, IPD053N08N3G
Manufacturer: Infineon ↗
File Size: 326.90 KB
Datasheet: IPD053N08N3G_InfineonTechnologies.pdf
Description: Power-Transistor
Note: This datasheet PDF includes multiple part numbers: IPD053N08N3, IPD053N08N3G.
Please refer to the document for exact specifications by model.

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 80 V 5.3 mW 90 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified accord

IPD053N08N3 Distributors

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IPD053N08N3G Power-Transistor Infineon

Infineon IPD053N08N3-like datasheet