IPD05N03LBG
Infineon ↗ Technologies
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Optimos2 power-transistor. and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology,
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IPD05N03LB - OptiMOS2 Power-Transistor
(Infineon Technologies)
..net
IPD05N03LB G
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for .
IPD05N03LA - OptiMOS 2 Power-Transistor
(Infineon Technologies AG)
IPD05N03LA IPS05N03LA
IPF05N03LA IPU05N03LA
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to.
IPD050N03L - MOSFET
(Infineon Technologies)
IPD050N03L G
MOSFET
OptiMOSTM 3 Power-Transistor, 30 V
Features
• Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualif.
IPD050N03L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD050N03L, IIPD050N03L
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤5mΩ ·Enhancement mode: ·100% avalanche .
IPD050N03LG - MOSFET
(Infineon Technologies)
IPD050N03L G
MOSFET
OptiMOSTM 3 Power-Transistor, 30 V
Features
• Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualif.
IPD050N10N5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD050N10N5,IIPD050N10N5
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤5mΩ ·Enhancement mode: ·100% avalanche.
IPD050N10N5 - MOSFET
(Infineon)
IPD050N10N5
MOSFET
OptiMOSTM5 Power-Transistor, 100 V
Features
• N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low o.
IPD052N10NF2S - MOSFET
(Infineon)
IPD052N10NF2S
MOSFET
StrongIRFETTM 2 Power-Transistor
Features
• Optimized for a wide range of applications • N-Channel, normal level • 100% avalanch.
IPD053N06N - Power-Transistor
(Infineon)
Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .
IPD053N06N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD053N06N, IIPD053N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanch.