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IPD053N08N3G Power-Transistor

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Description

IPD053N08N3 G OptiMOS®3 Power-Transistor .

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Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 80 5.3 90
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to

IPD053N08N3G Distributors

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Power-Transistor Infineon Technologies
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