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IPD053N06N Power-Transistor

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Description

Type OptiMOSTM Power-Transistor .

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Features

* Optimized for high performance SMPS, e. g. sync. rec.
* 100% avalanche tested
* Superior thermal resistance
* N-channel

Applications

* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 IPD053N06N Product Summary VDS RDS(on),max ID QOSS QG(0V. .10V) 60 V 5.3 mW 45 A 32 nC 27 nC PG-TO252-3 Type IPD053N06N Package PG-TO252-3 Marking 053N06N Maximum ratings, at T j=25 °C, unless oth

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