Datasheet Details
- Part number
- IPD053N06N3G
- Manufacturer
- Infineon ↗ Technologies
- File Size
- 338.79 KB
- Datasheet
- IPD053N06N3G_InfineonTechnologies.pdf
- Description
- OptiMOS Power-Transistor
IPD053N06N3G Description
www.DataSheet4U.net Type IPD053N06N3 G OptiMOS(TM)3 Power-Transistor .
IPD053N06N3G Features
* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified acc
IPD053N06N3G Applications
* Type IPD053N06N3 G
Product Summary V DS R DS(on),max ID 60 5.3 90 V mΩ A
Package Marking
PG-TO252-3 053N06N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C2)
V GS=10 V, T C=100 °C
Value 90 78 360 68 ±20
Unit
📁 Related Datasheet
📌 All Tags
IPD053N06N3G Stock/Price