IPD053N06N3G Datasheet - Infineon Technologies

IPD053N06N3G, OptiMOS Power-Transistor

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Datasheet Details

Part number:

IPD053N06N3G

Manufacturer:

Infineon ↗ Technologies

File Size:

338.79 KB

Description:

OptiMOS Power-Transistor

Features

* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified acc

Applications

* Type IPD053N06N3 G Product Summary V DS R DS(on),max ID 60 5.3 90 V mΩ A Package Marking PG-TO252-3 053N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C2) V GS=10 V, T C=100 °C Value 90 78 360 68 ±20 Unit

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IPD053N06N3G OptiMOS Power-Transistor Infineon Technologies

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