IPD053N06N3G
Infineon ↗ Technologies
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Optimos power-transistor.
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IPD053N06N - Power-Transistor
(Infineon)
Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .
IPD053N06N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD053N06N, IIPD053N06N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanch.
IPD053N08N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD053N08N3,IIPD053N08N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanc.
IPD053N08N3 - Power-Transistor
(Infineon)
IPD053N08N3 G
OptiMOS®3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance.
IPD053N08N3G - Power-Transistor
(Infineon Technologies)
IPD053N08N3 G
OptiMOS®3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance.
IPD050N03L - MOSFET
(Infineon Technologies)
IPD050N03L G
MOSFET
OptiMOSTM 3 Power-Transistor, 30 V
Features
• Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualif.
IPD050N03L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD050N03L, IIPD050N03L
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤5mΩ ·Enhancement mode: ·100% avalanche .
IPD050N03LG - MOSFET
(Infineon Technologies)
IPD050N03L G
MOSFET
OptiMOSTM 3 Power-Transistor, 30 V
Features
• Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualif.
IPD050N10N5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD050N10N5,IIPD050N10N5
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤5mΩ ·Enhancement mode: ·100% avalanche.
IPD050N10N5 - MOSFET
(Infineon)
IPD050N10N5
MOSFET
OptiMOSTM5 Power-Transistor, 100 V
Features
• N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low o.