057N08N Datasheet | Specifications & PDF Download

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G %&$ #™3 Power-Transistor Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D

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IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G %&$ #™3 Power-Transistor Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D

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() CRST060N08N3,CRSS057N08N3 SkyMOS3 N-MOSFET 80V, 5mΩ, 100A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RDS(o

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 80V OptiMOS™3 Power-Transistor IPA057N08N3 G Data Sheet Rev. 2.2 F

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IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G %&$ #™3 Power-Transistor Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D

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isc N-Channel MOSFET Transistor IPP057N08N3， IIPP057N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.7mΩ ·Enhancement mode ·Fast Switch

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 80V OptiMOS™3 Power-Transistor IPA057N08N3 G Data Sheet Rev. 2.2 F

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 80V OptiMOS™3 Power-Transistor IPA057N08N3 G Data Sheet Rev. 2.2 F

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isc N-Channel MOSFET Transistor IPA057N08N3,IIPA057N08N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 5.7mΩ (max) ·Enhancement mode ·Fast Swi

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IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G %&$ #™3 Power-Transistor Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D

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