0606 Datasheet | Specifications & PDF Download

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650V Silicon Carbide Schottky Diode GENERAL DESCRIPTION ◆650V Schottky rectifier ◆Zero reverse recovery current/voltage ◆High frequency operation ◆Swi

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PHPT60606NY 60 V, 6 A NPN high power bipolar transistor 8 December 2014 Product data sheet 1. General description NPN high power bipolar transistor

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B2D06065E1 SiC Schottky Diode Product Summary VRRM 650
V Package: TO-252-3 IF (TC=160°C) QC 6A 17 nC Features  Low leakage current (IR)  Zero

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MSD06065V1 MSD06065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-F

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SILICON CARBIDE SCHOTTKY DIODE Green LSC06065TDW REVERSE VOLTAGE – 650 Volts FORWARD CURRENT – 6 Amperes FEATURES • Positive temperature coefficient

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Green SILICON CARBIDE SCHOTTKY DIODE LSC06065W REVERSE VOLTAGE – 650 Volts FORWARD CURRENT – 6 Amperes FEATURES • Positive temperature coefficient f

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B2D06065K1 SiC Schottky Diode Product Summary VRRM 650
V IF (TC=165°C) 6A QC 18 nC Features  Low leakage current (IR)  Zero reverse recovery

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MSF06065V1 MSF06065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Fr

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Product Folder Order Now Technical Documents Tools & Software Support & Community LMZ30606 SNVS995B – JULY 2013 – REVISED APRIL 2018 LMZ30606 6A

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MSNP06065G1 MSNP06065G1 650V Silicon Carbide Schottky Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possi

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WLCSP6 NEX30606 1.8 V to 5.0 V, 600 mA, 220 nA ultra-low quiescent current, step-down converter Rev. 1 — 20 November 2024 Product data sheet 1.

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PCF50606HN/xA/N1 PCF50606HN/xB/N1 PCF50605HN/xA/N1 PCF50605HN/xB/N1 Controller for Power Supply and Battery Management Rev. 2.2 — 9 April 2004 Pre

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PHPT60606PY 60 V, 6 A PNP high power bipolar transistor 9 December 2014 Product data sheet 1. General description PNP high power bipolar transistor

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C6D06065A 6th Generation 650 V, 6 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky

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C6D06065G 650 V, 6 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, pow

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MSP06065V1 MSP06065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-F

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MSC0606W N and P-Channel Enhancement Mode Power MOS FET General Features ● N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V ● P-Channel VDS = -

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PCF50606HN/xA/N1 PCF50606HN/xB/N1 PCF50605HN/xA/N1 PCF50605HN/xB/N1 Controller for Power Supply and Battery Management Rev. 2.2 — 9 April 2004 Pre

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