060N06N Datasheet | Specifications & PDF Download

IPA060N06NM5S MOSFET OptiMOSTM 5 Power-Transistor, 60 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on

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IPA060N06N MOSFET OptiMOSTM Power-Transistor, 60 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP060N06N，IIPP060N06N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.0mΩ ·Enhancem

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Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance

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Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance

(10 views)