IPP060N06N Datasheet, Mosfet, INCHANGE

IPP060N06N Features

• Mosfet
• Static drain-source on-resistance: RDS(on) ≤6.0mΩ
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations

PDF File Details

Part number:

IPP060N06N

Manufacturer:

INCHANGE

File Size:

241.36kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IPP060N06N Application

• Applications
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID

TAGS

IPP060N06N

INCHANGE

📁 Related Datasheet

IPP060N06N - Power-Transistor (Infineon Technologies)
Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .

IPP062NE7N3 - N-Channel MOSFET (INCHANGE)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP062NE7N3，IIPP062NE7N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.2mΩ ·Enhance.

IPP062NE7N3 - Power-Transistor (Infineon)
# #     %&$ #B< # : A 0<& <,9=4=>: < 6LHZ[XLY Q( @D9=9J54 D53 8>? 3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3.

IPP062NE7N3G - Power-Transistor (Infineon)
# #     %&$ #B< # : A 0<& <,9=4=>: < 6LHZ[XLY Q( @D9=9J54 D53 8>? 3 8B? >? ECB53 D9693 1D9? > Q#451<6? B8978 6B5AE5>3.

IPP065N03L - Power-Transistor (Infineon)
Je]R %&$ #b % (>.;?6?@<> 7NJ\]ZN[ Q 2 CDCG:D49:? 8 ' ) - . 7@B- ' * Q) AD:> :J65 D649? @=@8I 7@B  4@? F6BD6BC Q+ E2 =:7:65 2 44@B.

IPP065N03L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP065N03L，IIPP065N03L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.5mΩ ·Enhancem.

IPP065N03LG - Power-Transistor (Infineon Technologies)
Je]R %&$ #b % (>.;?6?@<> 7NJ\]ZN[ Q 2 CDCG:D49:? 8 ' ) - . 7@B- ' * Q) AD:> :J65 D649? @=@8I 7@B  4@? F6BD6BC Q+ E2 =:7:65 2 44@B.

IPP065N06LG - Power-Transistor (Infineon Technologies)
.. IPB065N06L G IPP065N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channe.

IPP06CN10NG - Power-Transistor (Infineon Technologies)
.. IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x .

IPP06CNE8NG - Power-Transistor (Infineon Technologies)
.. IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x .