0A2-2 Datasheet | Specifications & PDF Download

ZXMN10A25G 100V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS 100 RDS(on) (⍀) 0.125 @ VGS= 10V 0.150 @ VGS= 6V ID (A) 4 3.7 Description T

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10A05 SERIES SILICON RECTIFIER VOLTAGE 50~1000 Volt CURRENT 10 Ampere FEATURES • High surge current capability • Low leakage • Low forward voltage dro

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HIP7030A2 ADVANCE INFORMATION August 1996 J1850 8-Bit 68HC05 Microcontroller Description The HIP7030A2 HCMOS Microcomputer is a member of the CDP68HC

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SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=50A. Zener Voltage : 27V(Typ.) POLARIT

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MHW720A1/D UHF Power Amplifiers Capable of wide power range control as enc

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SIDACtor® Protection Thyristors Baseband Protection (Voice-DS1) T10A Series - DO-15 Agency Approvals Agency Agency File Number E128662 Pinout Des

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150D Vishay Sprague Solid-Electrolyte TANTALEX® Capacitors Hermetically-Sealed, Axial-Lead FEATURES • Terminations: Tin/lead (SnPb), 100 % Tin (RoHS

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150D Vishay Sprague Solid-Electrolyte TANTALEX® Capacitors Hermetically-Sealed, Axial-Lead FEATURES • Terminations: Tin/lead (SnPb), 100 % Tin (RoHS

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POLYZEN DEVICES Polymer Protected Zener Diode PolyZen devices are polymer-enhanced, precision Zener diodes. They offer resettable protection against

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SSC80A2GT1 N-Channel Enhancement Mode MOSFET  Features  VDS VGS 100V ±20V RDSon TYP 129mR@10V 130mR@4V5 ID 5A   General Description This d

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T-1 PACKAGE NPN PHOTOTRANSISTOR Description The MID-30A22 is a NPN silicon phototransistor mounted in a lensed , special dark plastic package.The lens

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T-1 PACKAGE NPN PHOTOTRANSISTOR Description The MID-30A225 is a NPN silicon phototransistor mounted in a lensed , special dark plastic package. 5.25 (

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TO-46 PACKAGE NPN PHOTOTRANSISTOR Description The MID-40A22 is a NPN silicon phototransistor mounted in a lensed, special dark plastic package. The le

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SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=50A. Zener Voltage : 27V(Typ.) POLARIT

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

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Solid-State Relays Features Rugged, epoxy encapsulation construction 4,000 volts of optical isolation Subjected to full load test and six times the r

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www.DataSheet4U.com China Electronics Technology Group Corporation No.26 Research Institute 70MHz SAW Filter 9MHz Bandwidth Part Number:LBN70A21 ww

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www.DataSheet4U.com China Electronics Technology Group Corporation No.26 Research Institute 70MHz SAW Filter 7MHz Bandwidth Part Number: LBN70A26 w

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www.DataSheet4U.com PD-96983 Radiation Hardended, Solid-State Relay with Buffered Inputs Product Summary Part Number RDHA710SE10A2FK RDHA710SE10A2F

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ZXMN10A25K 100V DPAK N-channel enhancement mode MOSFET Summary V(BR)DSS 100 RDS(on) (V) 0.125 @ VGS= 10V 0.150 @ VGS= 6V ID (A) 6.4 5.8 Description T

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