IXGH40N120A2 Datasheet (IXYS) - High Voltage IGBT

IXGH40N120A2, High Voltage IGBT

High Voltage IGBT Low VCE(sat) Preliminary Data Sheet IXGH 40N120A2 IXGT 40N120A2 IXGH 40N120A2 IXGT 40N120A2 V = 1200 I CES = 75 V ≤C25 CE(sat) 2.0 V A V Symbol Test Conditions Maximum Ratings VCES VCES VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TTJsMtg TL TSOLD Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C Continuous Transient TC = 25°C, IGBT chip capability TC = 110°C TJ ≤ 150°C, tp < 300 μs VGE = 15 V, TVJ = 150°C, RG = 5 Ω Clamped inductive load, VCE < 960 V TC = 25°C Maximum

IXGH40N120A2 Features

* International standard packages

* Low VCE(sat) - for minimum on-state conduction losses

* MOS Gate turn-on - drive simplicity Applications

* AC motor speed control

* DC servo and robot drives

* DC choppers

* Uninterruptible power supplies (UP