IXGH40N120C3D1 Datasheet - IXYS

IXGH40N120C3D1 - High Speed PT IGBT

Preliminary Technical Information GenX3TM C3-Class IGBT w/Diode High Speed PT IGBT for 20 - 50 kHz Switching IXGH40N120C3D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 1200V 40A 4.4V 57ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TJ = 125°C, RG = 3Ω Clamped i.

IXGH40N120C3D1 Features

* z Optimized for Low Conduction Losses z Square RBSOA z Avalanche Rated z Anti-Parallel Ultra Fast Diode z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications

* Switch-Mode and Resonant-Mode Power Supplies

* Uninterruptible Power Su

IXGH40N120C3D1-IXYS.pdf