0C3 Datasheet | Specifications & PDF Download

Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated hig

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SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rate

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www.vishay.com VS-SD1500C..L Series Vishay Semiconductors Standard Recovery Diodes, (Hockey PUK Version), 1600 A B-PUK (DO-200AB) PRIMARY CHARACTE

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SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic av

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XPTTM 900V IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYT80N90C3 IXYH80N90C3 Symbol VCES VCGR VGES VGEM IICLR25MS IC110 ICM SSOA (RBSOA)

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XPTTM 600V IGBT GenX3TM IXXH30N60C3 Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA

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Datasheet Version 1.1.1 TMR7616-C Current Sensor IC Description The TMR7616-C series current sensor IC operate on the principle of electromagnetic i

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Features • • • • • • • • • • • • • • • • • • • • • 8032 Pin and Instruction Compatible Four 8-bit I/O Ports Three 16-bit Timer/Counters 256 bytes RAM

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XPTTM 600V IGBT GenX3TM w/ Diode IXXH30N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110

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www.DataSheet4U.com www.DataSheet4U.com

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SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax

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ERL (Military RLR) www.vishay.com Vishay Dale Metal Film Resistors, Military/Established Reliability, MIL-PRF-39017 Qualified, Type RLR • Meets requ

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SPP06N80C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qua

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MULTILAYER CERAMIC CHIP CAPACITORS Upgrade Surface Mount Device ?FEATURES 1. Large capacitance by small size. 2. Excellent noise absorption. 3. High

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GenX3TM 600V IGBTs IXGH60N60C3D1 with Diode IXGT60N60C3D1* *Obsolete Part Number High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = V ≤ C

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Preliminary Technical Information GenX3TM 1200V IGBT IXGR24N120C3D1 High speed PT IGBTs for 20-50kHz Switching VCES = IC25 = VCE(sat) ≤ tfi(typ) =

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Preliminary Technical Information GenX3TM 300V IGBT IXGH100N30C3 High Speed PT IGBTs for 50-150kHz switching V= CES IC110 = V ≤ CE(sat) t = fi

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Advance Technical Information GenX3TM 300V IGBT IXGH60N30C3 High Speed IGBTs for 50-150kHz switching V= CES IC110 = V ≤ CE(sat) t = fi typ 300

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INTEGRATED CIRCUITS 80C31/80C32 80C51 8-bit microcontroller family 128/256 byte RAM ROMless low voltage (2.7 V–5.5 V), low power, high speed (33 MHz)

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Silicon N-Channel Power MOSFET CS1N60 C3H ○R General Description： CS1N60 C3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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