IXGR24N120C3D1 Datasheet - IXYS

IXGR24N120C3D1 - High speed PT IGBT

Preliminary Technical Information GenX3TM 1200V IGBT IXGR24N120C3D1 High speed PT IGBTs for 20-50kHz Switching VCES = IC25 = VCE(sat) ≤ tfi(typ) = 1200V 48A 4.2V 110ns Symbol VCES V CGR V GES V GEM I C25 IC100 ICM IA E AS SSOA (RBSOA) PC TJ TJM Tstg FC TL T SOLD VISOL Weight Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C, R GE = 1MΩ Continuous Transient T C = 25°C TC = 100°C TC = 25°C, 1ms TC = 25°C T = 25°C C VGE= 15V, TJ = 125°C, RG = 5Ω Clamped inductive load @V

IXGR24N120C3D1 Features

* DCB Isolated mounting tab

* Meets TO-247AD package outline

* High current handling capability

* Latest generation HDMOSTM process

* MOS Gate turn-on -drive simplicity

* Avalanche Rated Applications

* Switch-mode and resonant-mode power suppli

IXGR24N120C3D1-IXYS.pdf