z Electrically Isolated tab z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability
✔ IXGR32N170AH1 Application
z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z
PDF File Details
IXYS manufacturer logo
and representative part image
IXGR32N170H1, IXYS
High Voltage IGBT with Diode
Electrically Isolated Tab
Preliminary Data Sheet
IXGR 32N170H1
IVCC2E5S VCE(sat) tfi(typ)
= 1700 V = 38 A = 3.5 V = 25.
IXGR32N90B2D1, IXYS
Advance Technical Information
HiPerFASTTM IGBT IXGR 32N90B2D1 with Fast Diode
Electrically Isolated Base
V I CES VC25 t CE(sat)
fi typ
= 900 V = 47.
IXGR120N60B, IXYS
HiPerFASTTM IGBT IXGR 120N60B ISOPLUS247TM
(Electrically Isolated Back Surface)
V= CES
IC25 = = VCE(sat)
600 V 156 A 2.1 V
Symbol
Test Conditions
.
IXGR120N60C2, IXYS
ADVANCE TECHNICAL INFORMATION
HiPerFASTTM IGBT IXGR 120N60C2
ISOPLUS247TM
Lightspeed 2TM Series
(Electrically Isolated Back Surface)
V=
I CES =
VC.
