IXGR32N170AH1 Datasheet - IXYS

IXGR32N170AH1 - High Voltage IGBT

Advance Technical Information www.DataSheet4U.com High Voltage IGBT with Diode Electrically Isolated Tab IXGR 32N170AH1 VCES IC25 VCE(sat) tfi(typ) = 1700 V = 26 A = 5.2 V = 50 ns Symbol VCES VCGR VGES VGEM IC25 IC90 IF90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg FC VISOL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω T.

IXGR32N170AH1 Features

* z Electrically Isolated tab z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC chop

IXGR32N170AH1_IXYS.pdf

IXGR32N170AH1 Datasheet Preview — Preview of IXGR32N170AH1 PDF

Datasheet Details

Part number:

IXGR32N170AH1

Manufacturer:

IXYS

File Size:

540.35 KB

Description:

High voltage igbt.

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IXGR32N170AH1 High Voltage IGBT IXYS